作者: C. Ristoscu , G. Socol , C. Ghica , I.N. Mihailescu , D. Gray
DOI: 10.1016/J.APSUSC.2005.07.099
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摘要: Abstract Pulse shaping introduces the method that makes possible production of tunable arbitrary shaped pulses. We extend this to control prevalent growth cubic SiC films on Si (1 0 0) substrates by pulsed laser deposition at temperatures around 973 K from a target in vacuum. used system generating 200 fs pulses duration 800 nm with 600 μJ 1 kHz. The obtained structures are investigated electron microscopy, X-ray diffraction and profilometry. observed grains embedded an amorphous texture, characteristic our opinion depositions very short present comparison deposited without pulse shaping. promotes increased crystallization results thin strongly reduced density particulates, under similar conditions.