Chemical vapor deposition of TiWC thin films

作者: Hua Xia Ji , Carmela C Amato-Wierda

DOI: 10.1016/S0257-8972(01)01342-1

关键词: Scanning electron microscopeTransmission electron microscopyX-ray photoelectron spectroscopyAnalytical chemistrySelected area diffractionCarbon filmChemical vapor depositionCombustion chemical vapor depositionMaterials scienceThin filmMineralogy

摘要: Abstract TiWC thin films were deposited on stainless steel substrates (440C) by chemical vapor deposition (CVD) in a horizontal hot-wall reactor from TiCl 4 W(CO) 6 CH H 2 Ar gaseous mixture, at 1323 K and pressures ranging 0.13 to 20.00 kPa. The structures of the characterized using X-ray diffraction (XRD). lattice constant shifts that TiC WC 1− x with increasing W concentration films. A morphological analysis was carried out scanning electron microscopy (SEM). It found surface morphology varied total flow. Compositional studies binding characteristics investigated photoelectron spectroscopy (XPS). associated hardness measured nano-indentation ranged 23 32 GPa. transmission (TEM) selected area (SAD) reveal detailed microstructure presence phase.

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