A Three-Axis Magnetic Field Microsensor Fabricated Utilizing a CMOS Process
作者： Jian-Zhi Tseng , Po-Jen Shih , Cheng-Chih Hsu , Ching-Liang Dai
DOI: 10.3390/APP7121289
关键词: Amplifier 、 Magnetic field 、 Voltage 、 Common emitter 、 Optoelectronics 、 Materials science 、 Shallow trench isolation 、 Microelectromechanical systems 、 CMOS 、 Sensitivity (electronics)
摘要: This study develops a three-axis magnetic field (MF) microsensor manufactured by complementary metal oxide semiconductor (CMOS) process. The MF contains ring emitter, four bases, and eight collectors. Sentaurus TCAD was used to simulate the characterization. STI (shallow trench isolation) in process limit current direction reduce leakage current. produces voltage difference once it senses field. An amplifier circuitry magnifies into output. Experiments reveals that has sensitivity of 1.45 V/T along x-axis 1.37 y-axis.
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