Current transport mechanism of antimony-doped TiO2 nanoparticles based on MOS device
作者： Savaş Sönmezoğlu , Seçkin Akın
DOI: 10.1016/J.SNA.2013.04.037
关键词: Doping 、 Materials science 、 Optoelectronics 、 Field electron emission 、 Field emission microscopy 、 Spectroscopy 、 Semiconductor device 、 Dopant 、 Thin film 、 Nanotechnology 、 Antimony
摘要: Abstract The present work reports the fabrication and electrical characterizations of Sb-doped TiO2/n-Si metal–oxide-semiconductor (MOS) device. To determine effect antimony dopant on physical properties TiO2, pure thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) ultraviolet–visible (UV–vis) spectroscopy. Current–voltage (I–V) capacitance–voltage (C–V) measurements done to MOS structure. This structure showed a good rectifying behavior with typical ideality factor 2.09, which was considered high due current mechanism large defect density at interface. possible conduction determined analyzing I–V characteristics. obtained results show that this is an excellent candidate for semiconductor device applications.
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