High performance GaAs metal-insulator–semiconductor devices using TiO2 as insulator layer
作者： Savaş Sönmezoğlu , Seçkin Akın
DOI: 10.1016/J.CAP.2012.03.030
关键词:
摘要: Abstract In the present study, Cu/TiO 2 /n-GaAs Metal-Insulator–Semiconductor (MIS) structure was fabricated and variation in electrical characteristics of this have been analyzed as a function temperature using current–voltage ( I–V ) measurements range 50–290 K with steps 40 K. It has shown that ideality factor n decreased increasing temperature, however, zero-bias barrier height ϕ b , 0 increased temperature. Furthermore, Gaussian potential model used order to explain inhomogeneity observed structure. This discrepancy could be explained by local inhomogeneities at metal-semiconductor interface considering fluctuations surface potential. value Richardson constant, obtained modified plot first region (290–170 K) according distribution (GD), is excellent agreement theoretical for n-type GaAs. These results show understanding dependence may great help improving quality TiO grown on GaAs substrates future device technology.
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