Metastable growth of pure wurtzite InGaAs microstructures.

摘要: III–V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable conventional epitaxy, the pure WZ phase be stable nanowires with diameters smaller than certain critical values. However, thin are more vulnerable to surface recombination, this ultimately limit their performances as practical devices. In work, we study a metastable growth mechanism that yield purely WZ-phased InGaAs microstructures on silicon. nucleates sharp nanoneedles expand along both axial radial directions simultaneously core–shell fashion. base scale from tens of nanometers over micron, tip remain entire growth. The sharpness maintains high local surface-to-volume ratio, favoring hexagonal lattice grow axially. These unique features lead formation microsized structures To verify microstruc...