Pull-in-voltage and RF analysis of MEMS based high performance capacitive shunt switch
作者： Osor Pertin , Kurmendra
DOI: 10.1016/J.MEJO.2018.05.001
关键词: Shunt (electrical) 、 Insertion loss 、 Capacitance 、 Radio frequency 、 Materials science 、 Capacitive sensing 、 Electrical engineering 、 Microelectromechanical systems 、 Mechanical system 、 Return loss
摘要: Abstract This paper presents design of a RF MEMS (Radio Frequency Micro Electro Mechanical system) capacitive shunt switch to study the performance which depends on various indices. To achieve high in switch, different component materials were chosen very carefully. Modeling equations also derived for designed fixed-fixed beam considering formed capacitances both upstate and downstate positions. The FEM simulation accurate analytical results obtained effect capacitance switch. optimum dimensions achieving low pull voltage as approximately 19 V Static analysis confirms that provide several advantages such isolation, insertion loss circuit. concludes optimized return loss, isolation −43 dB, −0.05 dB, −12 dB respectively.
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