Growth of SiC nanowires/nanorods using a Fe-Si solution method
作者： Guangyi Yang , Renbing Wu , Jianjun Chen , Yi Pan , Rui Zhai
DOI: 10.1088/0957-4484/18/15/155601
关键词: Nucleation 、 Oxygen 、 Silicon 、 Chemical engineering 、 Nanotechnology 、 Nanorod 、 Vapours 、 Vapor–liquid–solid method 、 Graphite 、 Materials science 、 Nanowire
摘要: A new solution technique to grow SiC nanowires/nanorods was developed by simply heating Fe–Si melt on a graphite plate in argon atmosphere 1600 °C for 3 and 6 h. with diameters of 100 nm lengths several tens micrometres were grown the surface melt. The prototype is 3C-SiC (β-SiC), growth direction [111] 3C-SiC. Taking into consideration action Fe possible participation oxygen, mechanism nanowires proposed. It believed that formation combination solid–liquid–solid (SLS) reaction nucleation vapour–liquid–solid (VLS) process nanowire growth. In SLS reaction, carbon (solid) dissolved (liquid), then reacted silicon form nuclei (solid). VLS SiO CO (vapours) droplets (liquid) attached tip growing (solid), make them further.
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