作者: A.A. Yadav , M.A. Barote , T.V. Chavan , E.U. Masumdar
DOI: 10.1016/J.JALLCOM.2010.09.130
关键词: Analytical chemistry 、 Materials science 、 Seebeck coefficient 、 Optics 、 Indium tin oxide 、 Doping 、 Band gap 、 Thin film 、 Indium 、 Crystallite 、 Electrical resistivity and conductivity
摘要: Abstract Polycrystalline indium doped CdS0.2Se0.8 thin films with varying concentrations of have been prepared by spray pyrolysis at 300 °C. The as deposited characterized XRD, AFM, EDAX, optical and electrical resistivity measurement techniques. XRD patterns show that the are polycrystalline hexagonal crystal structure irrespective doping concentration. AFM studies reveal RMS surface roughness film decreases from 34.68 to 17.76 increase in concentration up 0.15 mol% further it increases for higher concentrations. Traces observed EDAX studies. band gap energy is found decrease 1.91 eV 1.67 eV after 0.15 mol%. shows semiconducting minimum 3.71 × 104 Ω cm doping. Thermoelectric power measurements exhibit n-type conductivity.