Structure of dual damascene structures having via hole and trench
作者： Jyu-Horng Shieh , Tai-Yen Peng
DOI:
关键词: Optoelectronics 、 Conductive materials 、 Semiconductor device 、 Trench 、 Cross section (physics) 、 Copper interconnect 、 Materials science 、 Electrical conductor 、 Dielectric layer
摘要: A structure and a formation method of semiconductor device are provided. The includes substrate conductive feature over the substrate. also dielectric layer via hole in layer. has an oval cross section. further trench layer, extends from bottom portion trench. width wider than hole. In addition, one or more materials filling electrically connected to feature.
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