Electroless deposition of W-doped Ag films onto p-Si(100) from diluted HF solution
作者： Wei-chun YE , Chuan-li MA , Chun-ming WANG , Feng ZHOU
DOI: 10.1016/S1003-6326(09)60054-6
关键词: Tungstate 、 Mole fraction 、 Crystallography 、 Doping 、 Silicon 、 Deposition (law) 、 X-ray photoelectron spectroscopy 、 Scanning electron microscope 、 Tungsten 、 Materials science 、 Nuclear chemistry
摘要: Abstract Tungsten-doped silver films were prepared by immersing hydrogen-terminated silicon wafers into the solution of 2.5 mmol/L [Ag 2 WO 4 ]+0.1 mol/L HF at 50 °C. Their growth and composition characterized with atomic force microscopy X-ray photoelectron spectroscopy, respectively. The effect tungstate ions on deposition was investigated diffraction (XRD) scanning electron (SEM) comparing W-doped Ag film film. It is found that molar fraction tungsten in deposits about 2.3% O to W ratio 4.0 have good anti-corrosion air 350 doping cannot change silver.
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