Electroless gold deposition on silicon(100) wafer based on a seed layer of silver
作者： F. Jing , H. Tong , L. Kong , C. Wang
DOI: 10.1007/S00339-003-2236-Z
关键词: X-ray photoelectron spectroscopy 、 Microstructure 、 Transition metal 、 Wafer 、 Morphology (linguistics) 、 Silicon 、 Deposition (law) 、 Layer (electronics) 、 Analytical chemistry 、 Chemistry
摘要: This article describes a method of electroless gold deposition on Si(100) wafer having silver surface as seed layer. The layer was firstly deposited onto the an etched in acidic solution 0.005 mol/L AgNO3+0.06 mol/LHF. is performed by immersing Ag-activated bath with composition 1.27×10-3 mol/L [AuCl4]-+2.00×10-2 mol/L NaH2PO2+8.32×10-2 mol/L NH2CH2CH2NH2 (pH = 9.0–9.5). temperature 50–70 °C. morphology and film were characterized atomic force microscopy (AFM) X-ray photoelectron spectroscopy (XPS).
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