The effects of the hole subband mixing on the energies and oscillator strengths of excitons in a quantum well
作者： K S Chan
DOI: 10.1088/0022-3719/19/6/003
关键词: Biexciton 、 Binding energy 、 Oscillator strength 、 Exciton 、 Conduction band 、 Coupling 、 Physics 、 Quantum well 、 Mixing (physics) 、 Atomic physics
摘要: The binding energies of the excitons arising from two highest hole subbands have been calculated including coupling between heavy and light holes nonparabolicity in conduction band. It is found to increase by less than 1.8 MeV above those obtained for simple models. However, subband mixing considerably increases oscillator strength exciton with p-symmetry forbidden transition (HH2-E1) allows observation this experiments. Its energy therefore significantly smaller value normally used estimate minimum.
harvard.edu
sci-hub.se 参考文章(11)
Raymond Dingle, Confined carrier quantum states in ultrathin semiconductor heterostructures Advances in Solid State Physics. ,vol. 15, pp. 21- 48 ,(1975) , 10.1007/BFB0107373
W. T. Masselink, P. J. Pearah, J. Klem, C. K. Peng, H. Morkoç, G. D. Sanders, Yia-Chung Chang, Absorption coefficients and exciton oscillator strengths in AlGaAs-GaAs superlattices Physical Review B. ,vol. 32, pp. 8027- 8034 ,(1985) , 10.1103/PHYSREVB.32.8027
J. N. Schulman, Yia-Chung Chang, Band mixing in semiconductor superlattices Physical Review B. ,vol. 31, pp. 2056- 2068 ,(1985) , 10.1103/PHYSREVB.31.2056
Ronald L. Greene, Krishan K. Bajaj, Dwight E. Phelps, Energy levels of Wannier excitons in G a A s − Ga 1 − x Al x As quantum-well structures Physical Review B. ,vol. 29, pp. 1807- 1812 ,(1984) , 10.1103/PHYSREVB.29.1807
J. C. Maan, G. Belle, A. Fasolino, M. Altarelli, K. Ploog, Magneto-optical determination of exciton binding energy in GaAs- Ga 1 − x Al x As quantum wells Physical Review B. ,vol. 30, pp. 2253- 2256 ,(1984) , 10.1103/PHYSREVB.30.2253
S. Tarucha, H. Okamoto, Y. Iwasa, N. Miura, Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurement Solid State Communications. ,vol. 52, pp. 815- 819 ,(1984) , 10.1016/0038-1098(84)90012-7
C. Weisbuch, R.C. Miller, R. Dingle, A.C. Gossard, W. Wiegmann, Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures Solid State Communications. ,vol. 88, pp. 943- 946 ,(1993) , 10.1016/0038-1098(93)90274-Q
R. C. Miller, D. A. Kleinman, W. T. Tsang, A. C. Gossard, Observation of the excited level of excitons in GaAs quantum wells Physical Review B. ,vol. 24, pp. 1134- 1136 ,(1981) , 10.1103/PHYSREVB.24.1134
S. Chaudhuri, K. K. Bajaj, Effect of nonparabolicity on the energy levels of hydrogenic donors in G a A s − Ga 1 − x Al x As quantum-well structures Physical Review B. ,vol. 29, pp. 1803- 1806 ,(1984) , 10.1103/PHYSREVB.29.1803
B. A. Vojak, W. D. Laidig, N. Holonyak, M. D. Camras, J. J. Coleman, P. D. Dapkus, High‐energy (Visible‐red) stimulated emission in GaAs Journal of Applied Physics. ,vol. 52, pp. 621- 626 ,(1981) , 10.1063/1.328832