Theory of excitons in GaAsGa1−xAlxAs quantum wells including valence band mixing
作者： Lucio Claudio Andreani , Alfredo Pasquarello
DOI: 10.1016/0749-6036(89)90068-2
关键词: Atomic physics 、 Band gap 、 Quantum well 、 Condensed matter physics 、 Ground state 、 Exciton 、 Physics 、 Quasi Fermi level 、 Oscillator strength 、 Biexciton 、 Excited state
摘要: Abstract A theory of excitons in GaAsGa1−xAlxAs quantum wells is presented, which includes valence band mixing via the calculated subband structure. Binding energies and oscillator strengths are for various their ground excited states. This implies that parity forbidden have zero strength, even when considered, some observed transitions cannot be state excitons. Examples given to second conduction subband.
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