作者: Dixian Zhao , Patrick Reynaert
DOI: 10.1109/JSSC.2015.2456918
关键词: Dynamic range 、 Electronic engineering 、 E band 、 Electronic circuit 、 Modulation 、 Engineering 、 Bandwidth (signal processing) 、 Electrical engineering 、 Resistor 、 Transmitter 、 CMOS
摘要: This paper describes a direct-conversion E-band transmitter (TX) in 40 nm bulk CMOS. As millimeter-wave (mm-Wave) circuits are vulnerable to process variations including the mismatch between interconnects, this TX design is conducted layout floor-plan oriented way. Compact and symmetrical floor-plans of poly-phase filter (PPF) I/Q modulator presented work suppress LO feed-through (LOFT) imbalance over both 71–76 81–86 GHz bands. In addition, systematic methodology proposed for mm-Wave PPF reduce required EM simulations. The calibration methods used easy implement further reducing LOFT with negligible impact on other performance metrics. 0.225 mm $^{2}$ achieves measured output power 12 dBm efficiency 15% about 15 bandwidth. It features an uncalibrated less than 30 dB from 62.5 85.5 GHz. by 4 ensure $-$ dBc more dynamic range. 4.5 Gb/s 64-QAM 14 16-QAM.