Fatigue life prediction for solder interconnects in IGBT modules by using the successive initiation method

作者: Nilesh Ghodke , Dipesh Kumbhakarna , Satej Nakanekar , Sandeep Tonapi

DOI: 10.1109/ITHERM.2014.6892335

关键词: Power semiconductor deviceSolderingBipolar junction transistorInsulated-gate bipolar transistorMaterials scienceEnergy (signal processing)ThermalElectronic engineeringReliability (semiconductor)Layer (object-oriented design)Mechanical engineering

摘要: Insulated gate bipolar transistors are the power semiconductors used for high current applications as a switching device. It is widely in electrical and hybrid vehicles. has become increasingly important to understand reliability of these modules. The lifetime prediction based on assumption that solder interconnections weakest part module assembly failure cause inelastic deformation energy accumulated within material. In this paper, effects thermo-mechanical fatigue layer interface have been investigated. A 2D model 6 pack, 1200V IGBT analysis. This study presents simulation crack initiation propagation under loading. Successive technique propagate layer. cyclic creep-fatigue damage thermal loading modeled using Energy Partitioning predict life an module.

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