SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

作者: Koto Satoru , Fujino Chiyo

DOI:

关键词: Volume (thermodynamics)Heat transferSemiconductorSubstrate (printing)Contact pressureSemiconductor deviceHeat sinkComposite materialContact resistanceMaterials science

摘要: PROBLEM TO BE SOLVED: To constitute a semiconductor device, in which heat generated from element is transferred to sink part, even if there are fluctuations gaps between the elements and housing device having mounted on substrate housing, disposed surround transfer member housing. SOLUTION: The comprises 2 11, 13 for enclosing part or entirety of with 16 brought into surface contact 2, pressurization 17 structurally irreversible material expanding foaming, by heating 13, passage low resistance formed temperature volume material, stabilizing impart pressure uniform appropriate pressure.

参考文章(3)
Yasuhiro Kawaguchi, Takashi Mizuno, Thermally conductive material ,(2014)
Nagataki Yuichiro, TERMINATION CIRCUIT FOR SIGNAL LINE ,(1990)