作者: Koto Satoru , Fujino Chiyo
DOI:
关键词: Volume (thermodynamics) 、 Heat transfer 、 Semiconductor 、 Substrate (printing) 、 Contact pressure 、 Semiconductor device 、 Heat sink 、 Composite material 、 Contact resistance 、 Materials science
摘要: PROBLEM TO BE SOLVED: To constitute a semiconductor device, in which heat generated from element is transferred to sink part, even if there are fluctuations gaps between the elements and housing device having mounted on substrate housing, disposed surround transfer member housing. SOLUTION: The comprises 2 11, 13 for enclosing part or entirety of with 16 brought into surface contact 2, pressurization 17 structurally irreversible material expanding foaming, by heating 13, passage low resistance formed temperature volume material, stabilizing impart pressure uniform appropriate pressure.