Effects of helium concentration on microcrystalline silicon thin film solar cells deposited by atmospheric-pressure plasma deposition at 13.3 kPa
作者： Jung-Dae Kwon , Johwa Yang , Jin-Seong Park , Dong-Won Kang
DOI: 10.1016/J.TSF.2018.01.061
关键词: Analytical chemistry 、 Solar cell 、 Atmospheric-pressure plasma 、 Thin film 、 Helium 、 Deposition (phase transition) 、 Raman spectroscopy 、 Plasma diagnostics 、 Plasma 、 Materials science
摘要: Abstract An atmospheric-pressure plasma deposition system was developed and used to deposit intrinsic hydrogenated microcrystalline silicon (μc-Si:H) thin films for μc-Si:H film solar cells. The helium (He) gas concentration in increased Raman crystallinity (Xc) of μc-Si:H, which a critical parameter determine photovoltaic performance. In addition, dependence Xc on the He is shown be closely related atomic hydrogen flux during growth, evidenced by diagnostics derived from situ optical emission spectroscopy measurements. Those analysis contributed achieve impressive performance – namely, power conversion efficiency 4.60%, an open-circuit voltage 0.52 V, short-circuit current density 13.62 mA/cm2, fill factor 0.65, first experimental demonstration cells fabricated with under very high working-pressure regime at 13.3 kPa.
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