Properties of magnetron sputtered Al–Si–N thin films with a low and high Si content

摘要: Abstract The article reports on properties of Al–Si–N films with a low (≤ 10 at.%) and high (≥ 25 at.%) Si content reactively sputtered using closed magnetic field dual magnetron system operated in ac pulse mode. were from composed target (a plate fixed by an Al ring inner diameter O i  = 15 or 26 mm). Main attention was devoted to the investigation relationship between structure their mechanical properties, thermal stability hardness, oxidation resistance. It found that (1) while are crystalline (c-(Al–Si–N)), those amorphous (a-(Al–Si–N)) when at substrate temperature T s  = 500 °C, (2) both groups exhibit (i) hardness H  = 21 25 GPa, respectively, values resistance exceeding 1000 °C; 1100 °C (Δ m  = 0 mg/cm 2 ) 1300 °C m  ≈ 0.003 mg/cm ), (3) a-(Al–Si–N) does not vary increasing annealing up even after 4 h, (4) c-(Al–Si–N) film ( 3 surface layer which is formed reaction free atoms ambient oxygen prevents fast penetration into bulk film. Obtained results contribute understand effect thin its