Silica zeolite low-k dielectric thin films and methods for their production

摘要: Thin films for use as dielectric in semiconductor and other devices are prepared from silica zeolites, preferably pure zeolites such pure-silica MFI. The have low k values, generally below about 2.7, ranging downwards to values 2.2. relatively uniform pore distribution, good mechanical strength adhesion, little affected by moisture, thermally stable. may be produced a starting zeolite synthesis or precursor composition containing source an organic structure-directing agent quaternary ammonium hydroxide. In one process the in-situ crystallization on substrate. another process, spin-coating, either through production of suspension crystals followed redispersion using excess alkanol preparing composition. Zeolite having patterned surfaces also produced.