Design-dependent gauge factors of highly doped n-type 4H-SiC piezoresistors
作者： T Akiyama , D Briand , N F de Rooij
DOI: 10.1088/0960-1317/22/8/085034
关键词: Cantilever 、 Gauge factor 、 Materials science 、 Composite material 、 Gauge (firearms) 、 Transverse orientation 、 Single element 、 Epitaxy 、 Electronic engineering 、 Wheatstone bridge 、 Doping
摘要: This paper presents the experimentally obtained gauge factor (GF) of 4H-SiC piezoresistors, fabricated out n-type epitaxial layer and characterized on millimeter-size SiC cantilever beams at room temperature. It was found that GF is dependent piezoresistor's length width. Piezoresistors narrower than approximately 30 µm showed a width-dependent GF. The highest 20.8 with single element piezoresistor in transverse orientation. In longitudinal orientation, −10, which clustered plural identical elements. Essential factors to consider for design optimum piezoresistors Wheatstone bridge configuration are presented.
harvard.edu
sci-hub.se 参考文章(10)
Muthu B. J. Wijesundara, Robert G. Azevedo, SiC Materials and Processing Technology Springer, New York, NY. pp. 33- 95 ,(2011) , 10.1007/978-1-4419-7121-0_2
Muthu B.J. Wijesundara, Robert Azevedo, Silicon carbide microsystems for harsh environments TAEBC-2011. ,(2011) , 10.1007/978-1-4419-7121-0
Xu Ji, Zhihong Li, Jianzhong Xi, Juan Li, Yangyuan Wang, A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process Journal of Micromechanics and Microengineering. ,vol. 18, pp. 115001- ,(2008) , 10.1088/0960-1317/18/11/115001
Leia Stirling, Karen Willcox, Philip Ferguson, Dava Newman, Kinetics and Kinematics for Translational Motions in Microgravity During Parabolic Flight Aviation, Space, and Environmental Medicine. ,vol. 80, pp. 522- 531 ,(2009) , 10.3357/ASEM.2356.2009
Toshiyuki Toriyama, Piezoresistance consideration on n-type 6H SiC for MEMS-based piezoresistance sensors Journal of Micromechanics and Microengineering. ,vol. 14, pp. 1445- 1448 ,(2004) , 10.1088/0960-1317/14/11/002
Terunobu Akiyama, Danick Briand, Nico F. de Rooij, Piezoresistive n-type 4H-SiC pressure sensor with membrane formed by mechanical milling ieee sensors. ,vol. 1, pp. 222- 225 ,(2011) , 10.1109/ICSENS.2011.6126936
M. Eickhoff, M. Möller, G. Kroetz, M. Stutzmann, Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC Journal of Applied Physics. ,vol. 96, pp. 2872- 2877 ,(2004) , 10.1063/1.1775052
J.S. Shor, L. Bemis, A.D. Kurtz, Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements IEEE Transactions on Electron Devices. ,vol. 41, pp. 661- 665 ,(1994) , 10.1109/16.285013
R.S. Okojie, A.A. Ned, A.D. Kurtz, W.N. Carr, Characterization of highly doped n- and p-type 6H-SiC piezoresistors IEEE Transactions on Electron Devices. ,vol. 45, pp. 785- 790 ,(1998) , 10.1109/16.662776
J.S. Shor, D. Goldstein, A.D. Kurtz, Characterization of n-type beta -SiC as a piezoresistor IEEE Transactions on Electron Devices. ,vol. 40, pp. 1093- 1099 ,(1993) , 10.1109/16.214734