Test structure and method for detecting via contact shorting in shallow trench isolation regions
作者： Effendi Leobandung , Huilong Zhu , Shih-Fen Huang
DOI:
关键词: Test structure 、 Optoelectronics 、 Electrical engineering 、 Materials science 、 Electrode 、 Shallow trench isolation 、 Active devices 、 Semiconductor device
摘要: A test structure for detecting void formation in semiconductor device layers includes a plurality of active areas formed substrate, shallow trench isolation (STI) regions separating the areas, gate electrode structures across and STI regions, matrix vias over between structures. At least one edge each pair at opposite ends given extends out to an associated area.
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