Pulsed laser reactive deposition of p-type ZnO film enhanced by an electron cyclotron resonance source
作者： Xin-Li Guo , Hitoshi Tabata , Tomoji Kawai
DOI: 10.1016/S0022-0248(00)00952-0
关键词: Thin film 、 Doping 、 Electron mobility 、 Chemistry 、 Electrical resistivity and conductivity 、 Analytical chemistry 、 Electron cyclotron resonance 、 Pulsed laser deposition 、 Hall effect 、 Substrate (electronics)
摘要: P-type ZnO films with carrier density 3‐610 18 cm ˇ3 , resistivity 2‐5Ocm and Hall mobility=0.1‐0.4cm 2 V ˇ1 s have been grown on fused silica glass substrate by pulsed laser reactive deposition using a pure metal Zn target in N2O plasma. The N acceptor doping was eectively enhanced the active formed gas passing through an electron resonance source during process. conduction achieved optimizing microwave-input power (E) pressure (PN2O). These electrical properties are suAcient for some practical applications. We expect this result to facilitate fabrication of transparent p‐n homojunctions suitable light-emitting diodes. # 2001 Elsevier Science B.V. All rights reserved.
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