Reduction of the Linewidths of Deep Luminescence Centers inSi28Reveals Fingerprints of the Isotope Constituents

作者: M. Steger , A. Yang , N. Stavrias , M. L. W. Thewalt , H. Riemann

DOI: 10.1103/PHYSREVLETT.100.177402

关键词: IsotopeCenter (category theory)Atomic physicsPhysicsCrystallographyLuminescenceReduction (recursion theory)General Physics and Astronomy

摘要: Dramatic reductions of the linewidths well-known deep centers in $^{28}\mathrm{Si}$ reveal ``isotopic fingerprints'' constituents. The $\ensuremath{\sim}1014\text{ }\text{ }\mathrm{meV}$ Cu center, thought to be either a pair or an isolated Cu, is shown contain four atoms, and $\ensuremath{\sim}780\text{ Ag center Ag. $\ensuremath{\sim}944\text{ $^{*}\mathrm{Cu}$ different configuration pair, fact contains three one Ag, new two-Cu two-Ag found. $\ensuremath{\sim}735\text{ previously assigned Fe, actually Au Cu. This suggests family four-atom (Cu, Au) centers.

参考文章(33)
J. Weber, H. Bauch, R. Sauer, Optical properties of copper in silicon: Excitons bound to isoelectronic copper pairs Physical Review B. ,vol. 25, pp. 7688- 7699 ,(1982) , 10.1103/PHYSREVB.25.7688
S.P. Watkins, U.O. Ziemelis, M.L.W. Thewalt, R.R. Parsons, Long lifetime photoluminescence from a deep centre in copper-doped silicon Solid State Communications. ,vol. 43, pp. 687- 690 ,(1982) , 10.1016/0038-1098(82)90772-4
S. K. Estreicher, D. West, J. Goss, S. Knack, J. Weber, First-principles calculations of pseudolocal vibrational modes: the case of Cu and Cu pairs in Si. Physical Review Letters. ,vol. 90, pp. 035504- ,(2003) , 10.1103/PHYSREVLETT.90.035504
Stefan K. Estreicher, First-principles theory of copper in silicon Materials Science in Semiconductor Processing. ,vol. 7, pp. 101- 111 ,(2004) , 10.1016/J.MSSP.2004.06.004
S. Knack, Copper-related defects in silicon Materials Science in Semiconductor Processing. ,vol. 7, pp. 125- 141 ,(2004) , 10.1016/J.MSSP.2004.06.002
M. Nakamura, S. Ishiwari, A. Tanaka, Number of Cu atom(s) in the 1.014 eV photoluminescence copper center and the center’s model in silicon crystal Applied Physics Letters. ,vol. 73, pp. 2325- 2327 ,(1998) , 10.1063/1.121811
Minoru Nakamura, Susumu Murakami, Hiroshi Hozoji, Naoyuki J. Kawai, Shigeaki Saito, Hiroyuki Arie, Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements Japanese Journal of Applied Physics. ,vol. 45, pp. L80- L82 ,(2006) , 10.1143/JJAP.45.L80
K.G. McGuigan, M.O. Henry, E.C. Lightowlers, A.G. Steele, M.L.W. Thewalt, A new photoluminescence band in silicon lightly doped with copper Solid State Communications. ,vol. 68, pp. 7- 11 ,(1988) , 10.1016/0038-1098(88)90234-7
K.G. McGuigan, M.O. Henry, M.C. Carmo, G. Davies, E.C. Lightowlers, A uniaxial stress study of a copper-related photoluminescence band in silicon Materials Science and Engineering: B. ,vol. 4, pp. 269- 272 ,(1989) , 10.1016/0921-5107(89)90255-9
S. K. Estreicher, D. West, M. Sanati, * Cu 0 : A metastable configuration of the { Cu s , Cu i } pair in Si Physical Review B. ,vol. 72, pp. 121201- ,(2005) , 10.1103/PHYSREVB.72.121201