Monoisotopic varieties of silicon and germanium with a high chemical and isotopic purity
作者： M. F. Churbanov , A. V. Gusev , A. D. Bulanov , A. M. Potapov
DOI: 10.1007/S11172-013-0040-2
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摘要: We presented the results on preparation of high-purity monoisotopic varieties silicon and germanium. The process involves separation isotopes in form SiF4 GeH4 by centrifugation, ultrapurification volatile compounds, poly single crystals. attained degree isotopic chemical purities crystals obtained was shown. content main isotope 28Si is >99.99% those 29Si 30Si are >99.9%. specific resistivity ∼1 kOhm cm about 100–150 Ohm cm. samples 76Ge have >88 at.% difference concentration electrochemically active impurities 5·1010 cm−3. 74Ge polycrystal 99.93 at.%. optical thermophysical properties isotope-enriched germanium were measured, which suggest a significant effect isopotic composition thermal capacity, conductivity, luminiscence, light absorption.
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