作者: R. Uchida , H. Yada , M. Makino , Y. Matsui , K. Miwa
DOI: 10.1063/1.4794055
关键词: Electron mobility 、 Drude model 、 Field-effect transistor 、 Single crystal 、 Optoelectronics 、 Absorption spectroscopy 、 Rubrene 、 Molecular physics 、 Chemistry 、 Infrared spectroscopy 、 Organic semiconductor 、 Physics and Astronomy (miscellaneous)
摘要: Polarized absorption spectra of hole carriers in rubrene single crystal field-effect transistors were measured the infrared region (725–8000 cm−1) by charge modulation spectroscopy. The absorptions, including superimposed oscillatory components due to multiple reflections within thin crystals, monotonically increased with decreasing frequency. and their polarization dependences well reproduced analysis based on Drude model, which absorptions holes electrons gate electrodes (silicon), fully considered. results support band transport rubrene.