作者: Churl Seung Lee , Kwang-Ryeol Lee , Kwang Yong Eun , Ki Hyun Yoon , Jun Hee Han
DOI: 10.1016/S0925-9635(01)00666-5
关键词: Vacuum arc 、 Materials science 、 Volumetric flow rate 、 Carbon 、 Analytical chemistry 、 Carbon film 、 Amorphous carbon 、 Cavity magnetron 、 Graphite 、 Sputtering
摘要: The mechanical properties and atomic bond structure of Si incorporated into tetrahedral amorphous carbon (ta-C) films were investigated. deposited by a filtered vacuum arc graphite with simultaneous sputtering Si. concentration in the film could be controlled changing flow rate Ar gas. It was observed that preferentially substituted sp bonded when less than 2.5 at.%. Since Si-C generated 3