Structure and properties of Si incorporated tetrahedral amorphous carbon films prepared by hybrid filtered vacuum arc process

作者: Churl Seung Lee , Kwang-Ryeol Lee , Kwang Yong Eun , Ki Hyun Yoon , Jun Hee Han

DOI: 10.1016/S0925-9635(01)00666-5

关键词: Vacuum arcMaterials scienceVolumetric flow rateCarbonAnalytical chemistryCarbon filmAmorphous carbonCavity magnetronGraphiteSputtering

摘要: The mechanical properties and atomic bond structure of Si incorporated into tetrahedral amorphous carbon (ta-C) films were investigated. deposited by a filtered vacuum arc graphite with simultaneous sputtering Si. concentration in the film could be controlled changing flow rate Ar gas. It was observed that preferentially substituted sp bonded when less than 2.5 at.%. Since Si-C generated 3

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