Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
作者： Fabrizio Roccaforte , Patrick Fiorenza , Giuseppe Greco , Raffaella Lo Nigro , Filippo Giannazzo
DOI: 10.1016/J.MEE.2017.11.021
关键词: Gallium nitride 、 Engineering physics 、 Wide-bandgap semiconductor 、 Semiconductor device 、 Materials science 、 Silicon carbide 、 Ohmic contact 、 Semiconductor 、 Context (language use) 、 Power semiconductor device
摘要: … -off GaN HEMT technology, the improvement of insulator/GaN interfaces, the development of good metallization schemes for GaN-… Survey of literature results on the values of threshold …
sci-hub.se 参考文章(137)
J.W. Chung, Jae-kyu Lee, E.L. Piner, T. Palacios, Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs IEEE Electron Device Letters. ,vol. 30, pp. 1015- 1017 ,(2009) , 10.1109/LED.2009.2027914
Zhongtao Wang, Wei Liu, Chunqing Wang, Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications Journal of Electronic Materials. ,vol. 45, pp. 267- 284 ,(2016) , 10.1007/S11664-015-4107-8
M. Tapajna, O. Hilt, E. Bahat-Treidel, J. Wurfl, J. Kuzmik, Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress IEEE Electron Device Letters. ,vol. 37, pp. 385- 388 ,(2016) , 10.1109/LED.2016.2535133
Aaron Modic, Gang Liu, Ayayi C. Ahyi, Yuming Zhou, Pingye Xu, Michael C. Hamilton, John R. Williams, Leonard C. Feldman, Sarit Dhar, High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping IEEE Electron Device Letters. ,vol. 35, pp. 894- 896 ,(2014) , 10.1109/LED.2014.2336592
Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Yoshiyuki Yonezawa, Hiroshi Yano, Improved Channel Mobility in 4H-SiC MOSFETs by Boron Passivation IEEE Electron Device Letters. ,vol. 35, pp. 1176- 1178 ,(2014) , 10.1109/LED.2014.2362768
Kenichiro Tanaka, Hidekazu Umeda, Hidetoshi Ishida, Masahiro Ishida, Tetsuzo Ueda, Effects of hole traps on the temperature dependence of current collapse in a normally-OFF gate-injection transistor Japanese Journal of Applied Physics. ,vol. 55, pp. 054101- ,(2016) , 10.7567/JJAP.55.054101
Giuseppe Greco, Ferdinando Iucolano, Fabrizio Roccaforte, Ohmic contacts to Gallium Nitride materials Applied Surface Science. ,vol. 383, pp. 324- 345 ,(2016) , 10.1016/J.APSUSC.2016.04.016
J. Houston Dycus, Weizong Xu, Daniel J. Lichtenwalner, Brett Hull, John W. Palmour, James M. LeBeau, Structure and chemistry of passivated SiC/SiO2 interfaces Applied Physics Letters. ,vol. 108, pp. 201607- ,(2016) , 10.1063/1.4951677
Giuseppe Greco, Ferdinando Iucolano, Salvatore Di Franco, Corrado Bongiorno, Alfonso Patti, Fabrizio Roccaforte, Effects of Annealing Treatments on the Properties of Al/Ti/p-GaN Interfaces for Normally OFF p-GaN HEMTs IEEE Transactions on Electron Devices. ,vol. 63, pp. 2735- 2741 ,(2016) , 10.1109/TED.2016.2563498
Maher Soueidan, Gabriel Ferro, Mihai Lazar, Christophe Raynaud, Berangere Toury, Marie-France Beaufort, Jean-Francois Barbot, Olivier Dezellus, Dominique Planson, Tony Abi-Tannous, A Study on the Temperature of Ohmic Contact to p-Type SiC Based on Ti 3 SiC 2 Phase IEEE Transactions on Electron Devices. ,vol. 63, pp. 2462- 2468 ,(2016) , 10.1109/TED.2016.2556725