Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices
作者： H.-H. Vuong , C.S. Rafferty , S.A. Eshraghi , J.L. Lentz , P.M. Zeitzoff
DOI: 10.1109/16.502426
关键词: Electronic engineering 、 Short-channel effect 、 PMOS logic 、 Dopant 、 Threshold voltage 、 Drain-induced barrier lowering 、 Optoelectronics 、 Transient (oscillation) 、 Doping 、 Materials science 、 Diffusion (business)
摘要: We present a model which simulates the trapping of arsenic and boron dopants at silicon-silicon dioxide interface, demonstrate that this gives significantly more accurate doping profiles for wide range PMOS devices, as characterized by device Threshold Voltage. In addition, newly-developed Transient Enhanced Diffusion (TED) is applied first time to process simulation buried-channel predicting an enhanced Short Channel Effect Drain Induced Barrier Lowering (DIBL) effect. By using both these models, excellent agreement achieved between simulated measured characteristics devices with gate lengths varying from 2 0.4 /spl mu/m, over bias conditions operating temperatures.
harvard.edu
sci-hub.se 参考文章(11)
Yoshiyuki Sato, Masaki Watanabe, Kazuo Imai, Characterization of Phosphorus Pile‐Up at the SiO2 / Si Interface Journal of The Electrochemical Society. ,vol. 140, pp. 2679- 2682 ,(1993) , 10.1149/1.2220885
Richard B. Fair, Joseph C. C. Tsai, The Diffusion of Ion‐Implanted Arsenic in Silicon Journal of The Electrochemical Society. ,vol. 122, pp. 1689- 1696 ,(1975) , 10.1149/1.2134111
G.A. Sai-Halasz, K.T. Short, J.S. Williams, Antimony and arsenic segregation at Si-SiO2interfaces IEEE Electron Device Letters. ,vol. 6, pp. 285- 287 ,(1985) , 10.1109/EDL.1985.26127
K. Sakamoto, K. Nishi, F. Ichikawa, S. Ushio, Segregation and transport coefficients of impurities at the Si/SiO2 interface Journal of Applied Physics. ,vol. 61, pp. 1553- 1555 ,(1987) , 10.1063/1.338089
P. B. Griffin, S. W. Crowder, J. M. Knight, Dose loss in phosphorus implants due to transient diffusion and interface segregation Applied Physics Letters. ,vol. 67, pp. 482- 484 ,(1995) , 10.1063/1.114543
F. Lau, L. Mader, C. Mazure, Ch. Werner, M. Orlowski, A model for phosphorus segregation at the silicon-silicon dioxide interface Applied Physics A. ,vol. 49, pp. 671- 675 ,(1989) , 10.1007/BF00616992
D.B.M. Klaassen, A unified mobility model for device simulation—I. Model equations and concentration dependence Solid-state Electronics. ,vol. 35, pp. 953- 959 ,(1992) , 10.1016/0038-1101(92)90325-7
M. C. Ridgway, P. J. Scanlon, J. L. Whitton, Nuclear reaction analysis of shallow B and BF2 implants in Si Journal of Applied Physics. ,vol. 62, pp. 3682- 3687 ,(1987) , 10.1063/1.339249
Richard B. Fair, J. C. C. Tsai, Theory and Direct Measurement of Boron Segregation in SiO2 during Dry, Near Dry, and Wet O 2 Oxidation Journal of The Electrochemical Society. ,vol. 125, pp. 2050- 2058 ,(1978) , 10.1149/1.2131361
H. Müller, J. Gyulai, W. K. Chu, J. W. Mayer, T. W. Sigmon, Influence of an Oxidizing Annealing Ambient on the Distribution of As, Sb, and Ga Implanted into Silicon Journal of The Electrochemical Society. ,vol. 122, pp. 1234- 1238 ,(1975) , 10.1149/1.2134432