MOS field effect transistor with reduced on-resistance
作者： Kazutoshi Int. Prop. Div. Nakamura , Yusuke Int. Prop. Div. Kawaguchi , Norio Int. Prop. Div. Yasuhara , Akio Int. Prop. Div. Nakagawa
DOI:
关键词: Optoelectronics 、 On resistance 、 Gate insulator 、 Materials science 、 Field-effect transistor 、 Semiconductor 、 Principal plane 、 Electrode 、 Electrical conductor
摘要: A semiconductor substrate includes a first principal plane and second opposite this plane. region is formed on the of substrate. Second third regions are separately from each other region. gate electrode formed, via insulator, between An electric conductor up to electrically connects with main connected insulators
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