Method of shielding through silicon vias in a passive interposer
作者： Meng-Lin Chung , Chih-Hsien Lin , Hsiang-Tai Lu
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摘要: A method of shielding through silicon vias (TSVs) in a passive interposer includes doping substrate with positive ions, and implanting ions an upper portion the substrate, such that has at least p-doped heavily portion. The further forming interlayer dielectric (ILD) above plurality ILD is configured to electrically couple one structure below interposer. forming, between pairs TSVs TSVs, lines dielectric, interconnect ILD.
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