Shear-solvo defect annihilation of diblock copolymer thin films over a large area.

摘要: Achieving defect-free block copolymer (BCP) nanopatterns with a long-ranged orientation over large area remains persistent challenge, impeding the successful and widespread application of BCP self-assembly. Here, we demonstrate new experimental strategy for defect annihilation while conserving structural order enhancing uniformity nanopatterns. Sequential shear alignment solvent vapor annealing generate perfectly aligned low density centimeter-scale areas, outperforming previous single or sequential combinations annealing. The enhanced quality pattern were characterized in unprecedented detail via scattering analysis incorporating mathematical indices using elaborate image processing algorithms. In addition, an advanced sampling method combined coarse-grained molecular simulation, found that domain swelling is driving force annihilation. superior large-scale was further confirmed diffraction optical properties after metallized patterns, suggesting strong potential optoelectrical devices.