Method of making a semiconductor device, and semiconductor device made thereby
作者： Peter Zurcher , Melvy F. Miller , Sriram Kalpat , Thomas P. Remmel
DOI:
关键词: Resistor 、 Interconnection 、 Capacitor 、 Electrode 、 Layer (electronics) 、 Materials science 、 Optoelectronics 、 Dielectric 、 Semiconductor device 、 Electrical engineering 、 Electrode material
摘要: A method of making a semiconductor device includes the steps of: providing substrate (110, 510, 1010, 1610) having patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing first dielectric material (130, 530, 1030, 1630) over layer; electrode (140, 540, 1040, 1640) material; second (150, 550, 1050, 1650) (160, 560, 1060, 1660) patterning to form top (211, 611, 1111, 1611) capacitor (210, 710, 1310, 1615); and (221, 721, 1221, 1621) (220, 720, 1320, 1625), an (212, 712, 1212, 1612) capacitor, define resistor (230, 730, 1330).
lens.org 参考文章(16)
Frank Yauchee Hui, Allen Yen, Yifeng Winston Yan, Stacked structure for parallel capacitors and method of fabrication ,(2000)
Carter W. Kaanta, Stuart R. Martin, Matthew J. Rutten, Terry J. Brabazon, Badih El-Kareh, Precision analog metal-metal capacitor ,(1995)
Michael D. Delaus, Edward Gleason, Gilbert L. Huppert, Ic resistor and capacitor fabrication method ,(2002)
Cerdin Lee, Yi Xu, Kai Shao, Shao-Fu Sanford Chu, Integration of MOM capacitor into dual damascene process ,(1999)
T. Yoshitomi, Y. Ebuchi, H. Kimijama, T. Ohguro, E. Morifuji, H.S. Momose, K. Kasai, K. Ishimaru, F. Matsuoka, Y. Katsumata, M. Kinugawa, H. Iwai, High performance MIM capacitor for RF BiCMOS/CMOS LSIs bipolar/bicmos circuits and technology meeting. pp. 133- 136 ,(1999) , 10.1109/BIPOL.1999.803543
R.J. Bolam, V. Ramachandran, D. Coolbaugh, K.M. Watson, Electrical characteristics and reliability of UV transparent Si/sub 3/N/sub 4/ metal-insulator-metal (MIM) capacitors IEEE Transactions on Electron Devices. ,vol. 50, pp. 941- 944 ,(2003) , 10.1109/TED.2003.812148
Ruichen Liu, Cheng-Yih Lin, Edward Harris, Sailesh Merchant, Stephen W Downey, Gary Weber, Nicholas A Ciampa, Wai Tai, WYC Lai, MD Morris, JE Bower, JF Miner, J Frackoviak, W Mansfield, D Barr, R Keller, Chong-Ping Chang, Chien-Shing Pai, SN Rogers, R Gregor, None, Single mask metal-insulator-metal (MIM) capacitor with copper damascene metallization for sub-0.18 /spl mu/m mixed mode signal and system-on-a-chip (SoC) applications international interconnect technology conference. pp. 111- 113 ,(2000) , 10.1109/IITC.2000.854297
Arjun Kar Roy, Thin-film capacitors and methods for forming the same ,(1999)
Edward Willem Albert Young, Gerjan Franciscus Arthur Van De Walle, Electronic component comprising a thin-film structure with passive elements ,(1996)
Chaw Sing Ho, Chit Hwei Ng, Structure and process for a capacitor and other devices ,(2002)