Method of fabricating a semiconductor device using plasma to form an insulating film
作者： Kiyotaka Tabuchi
DOI:
关键词: Substrate (electronics) 、 Plasma 、 Fabrication 、 Exfoliation joint 、 Materials science 、 Dielectric 、 Line (electrical engineering) 、 Ring (chemistry) 、 Semiconductor device 、 Electronic engineering 、 Composite material
摘要: A fabrication method of a semiconductor device is disclosed by which damage to another film or exfoliation prevented and an insulating having dielectric constant 2.5 less can be formed while strength maintained without deteriorating wiring line characteristic. According embodiment, on substrate plasma process, uses film-forming gas ring structure Si—O bonds, such that it maintains the bonds. contains silane-containing oxygen bond-containing gas, has
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