In-situ low-k capping to improve integration damage resistance
作者： Sure Ngo , Kang Sub Yim , Alexandros T. Demos , Jin Xu
DOI:
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摘要: A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a of processing substrate The comprises disposing within region, reacting an organosilicon compound, with oxidizing gas, porogen providing precursor in the presence plasma to deposit containing layer comprising silicon, oxygen, carbon on substrate, depositing porous capping oxygen layer, ultraviolet (UV) curing remove at least portion from through convert having gaps.
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