Low-k dielectric thin films and chemical vapor deposition method of making same

摘要: A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and cleavable organic functional that when activated rearranges cleaves as a highly volatile liquid or gaseous by-product. In first step, dense film is deposited from the group, retained therein portion of groups. second post annealed to effectively remove by-products, resulting in porous constant film. The porous, low dielectric are useful insulating layers microelectronic device structures. Preferred producted di(formato)dimethylsilane precursor.