Effects of Residual Stress on the Electrical Properties of PZT Films
作者： Jae-Wung Lee , Chee-Sung Park , Miyoung Kim , Hyoun-Ee Kim
DOI: 10.1111/J.1551-2916.2007.01610.X
关键词: Sputtering 、 Annealing (metallurgy) 、 Residual stress 、 Ferroelectricity 、 Ultimate tensile strength 、 Thin film 、 Composite material 、 Piezoelectricity 、 Materials science 、 Compressive strength
摘要: The effects of the residual stress (either compressive or tensile) induced during heat-treatment process on electrical properties Pb(Zr0.52Ti0.48)O3 (PZT) films were investigated. PZT deposited platinized silicon substrates by rf-magnetron sputtering method using a single oxide target. After their deposition, bent elastically means specially designed fixture annealing process. Residual was in film removing substrate from after annealing. ferroelectric and piezoelectric markedly changed stresses; remnant polarization (Pr) saturation (Psat) increased when induced. On other hand, tensile film.
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