作者: Saif A Khan , S K Srivastava , D K Avasthi
DOI: 10.1088/0022-3727/45/37/375304
关键词: Irradiation 、 Nanoparticle 、 Oxide 、 Chemical engineering 、 Annealing (metallurgy) 、 Ion 、 Materials science 、 Transmission electron microscopy 、 Argon 、 Nanotechnology 、 Metal
摘要: Synthesis of a planar assembly metal nanoparticles embedded in silica by low-energy ion irradiation is presented here. Argon ions 350 keV were used to irradiate SiO2/Au/SiO2 and SiO2/Ag/SiO2 tri-layered films, with oxide thicknesses 40 nm layer thickness 2 nm, synthesize well isolated without the need annealing. The have an average diameter about 6 nm as revealed transmission electron microscopy. Simulations three-dimensional kinetic lattice Monte Carlo performed understand ion-induced nanoparticle array formation from initially percolated as-deposited matrix.