Medium energy, heavy and inert ion irradiation of metallic thin films: studies of surface nano‐structuring and metal burrowing
作者： Pravin Kumar , Kedar Mal , Sunil Kumar , Indra Sulania
DOI: 10.1002/SIA.5999
关键词:
摘要: In context to the ion induced surface nanostructuring of metals and their burrowing in substrates, we report influence Xe Kr ion-irradiation on Pt:Si Ag:Si thin films ~5-nm thickness. For irradiation films, several energies (275 350 keV Kr; 450 700 keV Xe) were chosen maintain a constant ratio nuclear energy loss electronic (Sn/Se) Pt Ag (five present studies). The ion-fluence was varied from 1.0 × 1015 1.0 × 1017 ions/cm2. irradiated characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) scanning electron (SEM). AFM SEM images show beam systematic nano-structuring films. nano-structures evolve with fluence. RBS spectra fluence dependent Si upon both beams. At highest fluence, depth metal for all conditions remains almost confirming synergistic effect losses by analysis also shows quite large sputtering bombarded yield 54% 62% irradiating ions at paper, experimental results discuss Si. Copyright © 2016 John Wiley & Sons, Ltd.
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