2D h-BN based RRAM devices
作者： F. M. Puglisi , L. Larcher , C. Pan , N. Xiao , Y. Shi
DOI: 10.1109/IEDM.2016.7838544
关键词: Electrode 、 Nanotechnology 、 Dielectric 、 Resistive random-access memory 、 Diffusion (business) 、 Materials science 、 Boron 、 Voltage 、 Optoelectronics 、 Graphene 、 Ion
摘要: … In conclusion, atomically thin h-BN is a promising 2D dielectric that shows reproducible intrinsic resistive switching, which can be used for engineering a new class of 2D RRAM devices. …
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