作者: James N. Reck , Rebecca Cortez , S. Xie , Ming Zhang , Matthew O’Keefe
DOI: 10.1016/J.APSUSC.2012.02.035
关键词: Amorphous solid 、 Dielectric 、 Analytical chemistry 、 Focused ion beam 、 Electron diffraction 、 Electrical resistivity and conductivity 、 Sputtering 、 X-ray photoelectron spectroscopy 、 High-resolution transmission electron microscopy 、 Materials science
摘要: Abstract Chemical and microstructural evaluation techniques have been used to characterize sputter deposited 100–150 nm thick BaTiO 3 nano-capacitors with 30 nm Ni electrodes fabricated on Si/SiO 2 wafers. More than 99% of devices had resistance > 20 MΩ. Electrodes were found a roughness, R , about 0.66 ± 0.04 nm, the value 1.3 ± 0.12 nm. Characterization film chemistry X-ray Photoelectron Spectroscopy (XPS) showed films excess oxygen Ba:Ti ratios ranging from 0.78 1.1, depending sputtering conditions. diffraction broad peak between approximately 20° 35° θ indicating either amorphous or contained grain sizes less 5 nm. Focused ion beam images confirmed presence smooth, conformal films, no visible signs macro-defects such as pin-holes, cracks, pores. High resolution transmission electron microscopy (TEM) patterns nearly limited short range order. No correlation was chemical studies dielectric permittivity (280–1000), loss (0.02–0.09), and/or resistivity (8.7 × 10 10 –1.5 × 10 12 Ω cm) values.