Modification of the exchange bias effect by He ion irradiation
作者： A. Mougin , T. Mewes , R. Lopusnik , M. Jung , D. Engel
DOI: 10.1109/20.908547
关键词:
摘要: FeNi/FeMn exchange bias samples with a large field at room temperature have been prepared. Upon irradiation He ions, both the and coercive are modified. For low ion doses is enhanced by about 70%. Above threshold dose of 0.3/spl middot/1/sup 15/ ions/cm/sup 2/, decreases continuously as increases. The observed modifications can be explained in terms defect creation acting pinning sites for domain walls atomic intermixing.
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