Quantum well multijunction photovoltaic cell

摘要: A monolithic, quantum well, multilayer photovoltaic cell comprises a p-n junction comprising p-region on one side and an n-region the other side, each of which regions series at least three semiconductor layers, all p-type in n-type n-region; said layers alternating barrier well layer material having first bandgap second when bulk thickness is narrower than bandgap, sandwiching being sufficiently thin that width its between bandgaps, such radiation incident above energy determined by will be absorbed produce electrical potential across junction.