Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy
作者： D. M. Bruls , P. M. Koenraad , H. W. M. Salemink , J. H. Wolter , M. Hopkinson
DOI: 10.1063/1.1578709
关键词:
摘要: … reduce the GaAs growth rate two-dimensional 2D on top of the dots during stack formation. … dots, thus forming the stack.The dots in the second and following layers are formed at a …
scitation.org
harvard.edu
narcis.nl
aip.org
core.ac.uk 参考文章(18)
I. Kegel, T. H. Metzger, A. Lorke, J. Peisl, J. Stangl, G. Bauer, J. M. García, P. M. Petroff, Nanometer-scale resolution of strain and interdiffusion in self-assembled InAs/GaAs quantum dots Physical Review Letters. ,vol. 85, pp. 1694- 1697 ,(2000) , 10.1103/PHYSREVLETT.85.1694
J. P. McCaffrey, M. D. Robertson, S. Fafard, Z. R. Wasilewski, E. M. Griswold, L. D. Madsen, Determination of the size, shape, and composition of indium-flushed self-assembled quantum dots by transmission electron microscopy Journal of Applied Physics. ,vol. 88, pp. 2272- 2277 ,(2000) , 10.1063/1.1287226
T. Walther, A. G. Cullis, D. J. Norris, M. Hopkinson, Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs. Physical Review Letters. ,vol. 86, pp. 2381- 2384 ,(2001) , 10.1103/PHYSREVLETT.86.2381
J. A. Barker, E. P. O’Reilly, Theoretical analysis of electron-hole alignment in InAs-GaAs quantum dots Physical Review B. ,vol. 61, pp. 13840- 13851 ,(2000) , 10.1103/PHYSREVB.61.13840
G. J. de Raad, P. M. Koenraad, J. H. Wolter, Use of the Schiller decapitation process for the manufacture of high quality tungsten scanning tunneling microscopy tips Journal of Vacuum Science & Technology B. ,vol. 17, pp. 1946- 1953 ,(1999) , 10.1116/1.590854
A. Rosenauer, W. Oberst, D. Litvinov, D. Gerthsen, A. Förster, R. Schmidt, Structural and chemical investigation of In 0.6 Ga 0.4 As Stranski-Krastanow layers buried in GaAs by transmission electron microscopy Physical Review B. ,vol. 61, pp. 8276- 8288 ,(2000) , 10.1103/PHYSREVB.61.8276
NN Ledentsov, VA Shchukin, M e Grundmann, N Kirstaedter, J Böhrer, O Schmidt, D Bimberg, VM Ustinov, A Yu Egorov, AE Zhukov, PS Kop’ev, SV Zaitsev, N Yu Gordeev, Zh I Alferov, AI Borovkov, AO Kosogov, SS Ruvimov, P Werner, U Gösele, J Heydenreich, None, Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth. Physical Review B. ,vol. 54, pp. 8743- 8750 ,(1996) , 10.1103/PHYSREVB.54.8743
P. B. Joyce, T. J. Krzyzewski, G. R. Bell, B. A. Joyce, T. S. Jones, Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying Physical Review B. ,vol. 58, ,(1998) , 10.1103/PHYSREVB.58.R15981
D.M. Bruls, J.W.A.M. Vugs, P.M. Koenraad, M.S. Skolnick, M. Hopkinson, J.H. Wolter, Cracking self-assembled InAs quantum dots Applied Physics A. ,vol. 72, pp. 205- 207 ,(2001) , 10.1007/S003390100663
D. M. Bruls, J. W. A. M. Vugs, P. M. Koenraad, H. W. M. Salemink, J. H. Wolter, M. Hopkinson, M. S. Skolnick, Fei Long, S. P. A. Gill, Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy Applied Physics Letters. ,vol. 81, pp. 1708- 1710 ,(2002) , 10.1063/1.1504162