作者: Guo Hai-Zhong , Liu Li-Feng , Lu Hui-Bin , Fei Yi-Yan , Xiang Wen-Feng
DOI: 10.1088/0256-307X/21/2/051
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摘要: Structure, electrical, and optical properties of Nb-doped BaTiO3 (Nb:BTO) thin films on MgO substrates grown by laser molecular beam epitaxy with increasing Nb content were investigated. The Nb:BTO high crystallinity are epitaxially substrates. With more content, the impurity phases found in films. Hall measurement at room temperature confirms that charge carriers n-type. When increases, carrier concentration mobility increase. Meanwhile transmittance decreases increase Nb-doping, width forbidden band each group is not affected presence samples. Raman spectra show structural phase transition may occur Nb-doping meantime defects impurities exist