Heteroepitaxial growth of BaTiO3 films on Si by pulsed laser deposition

摘要: Dielectric BaTiO3 films were heteroepitaxially grown on Si (100) substrates in cube‐on‐cube manner by employing a conductive TiN buffer layer. An epitaxial film was KrF pulsed excimer laser deposition. epitaxially the at substrate temperature higher than 600 °C and an oxygen pressure less 1 mTorr. This BaTiO3/TiN layer observed to have sharp interfaces little interdiffusion of constituent atoms secondary ion mass spectrometry. The surface had root‐mean‐square roughness nm as atomic force microscopy. A TiN/BaTiO3/TiN trilayer structure formed dielectric property measured for this metal‐insulator‐metal type capacitor. showed high relative constant 803 frequency MHz low leakage current 10−8 A/cm2 2 V.