作者: Manoj Kumar , Subhasis Haldar , Mridula Gupta , R S Gupta
DOI: 10.1088/0268-1242/31/10/105013
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摘要: The threshold voltage degradation due to the hot carrier induced localized charges (LC) is a major reliability concern for nanoscale Schottky barrier (SB) cylindrical gate all around (GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs). physics of material engineered (GME)-SB-GAA MOSFETs LC still unexplored. An explicit model GME-SB-GAA-MOSFETs with incorporation (N it) developed. To accurately minimum channel density has been taken into account. renders how +/− affects device subthreshold performance. One-dimensional (1D) Poisson's and 2D Laplace equations have solved two different regions (fresh damaged) metal work-functions. LCs are considered at drain side low work-function as N it more vulnerable towards drain. For reduction mobility degradation, lightly doped considered. proposed also includes effect height lowering metal–semiconductor interface. developed results verified using numerical simulation data obtained by ATLAS-3D simulator excellent agreement observed between analytical results.