作者: T.S Shamirzaev , A.M Gilinsky , A.I Toropov , A.K Bakarov , D.A Tenne
DOI: 10.1016/J.PHYSE.2003.08.019
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摘要: Abstract The temperature dependence of steady-state and time-resolved photoluminescence from self-assembled InAs quantum dots embedded in AlAs has been studied. Millisecond-long nonexponential decay is observed the range 4.2– 50 K . At higher temperatures, time decreases to a few nanoseconds. experimental results are interpreted using model singlet–triplet splitting exciton levels small dense dot system with local carrier transfer between dots.