Enhancement of photoresponse properties of β-FeSi2/Si heterojunctions by Al doping
作者： Yoshihito Maeda , Yoshikazu Terai , Masaru Itakura
DOI: 10.1016/J.OPTMAT.2004.08.036
关键词:
摘要: We have succeeded in enhancing the photovoltaic properties of p-n heterojunctions using β-FeSi 2 /Si(100) by doping Al into . Raman spectroscopy, Rutherford backscattering spectroscopy (RBS) and transmission electron microscope (TEM) observations revealed that contributes to synthesis a less defective interface epitaxial growth on Si(100). This feature may reduce recombination rate electron-hole pairs near depletion region, such photoresponse can be enhanced. observed significant photoelectric response corresponding interband transition band-gap energy effect used IR-photoelectric cells.
harvard.edu
elsevier.com
sci-hub.se 参考文章(15)
E. Arushanov, Ch. Kloc, E. Bucher, IMPURITY BAND IN P-TYPE BETA -FESI2 Physical Review B. ,vol. 50, pp. 2653- 2656 ,(1994) , 10.1103/PHYSREVB.50.2653
K Okajima, H Yamatsugu, C Wen, M Sudoh, K Yamada, Spectral sensitivity enhancement by thin film of β-FeSi2–Si composite prepared by RF-sputtering deposition Thin Solid Films. ,vol. 381, pp. 267- 275 ,(2001) , 10.1016/S0040-6090(00)01755-7
Yoshihito Maeda, Kenji Umezawa, Yoshikazu Hayashi, Kiyoshi Miyake, Kenya Ohashi, Photovoltaic properties of ion-beam synthesized β-FeSi2/n-Si heterojunctions Thin Solid Films. ,vol. 381, pp. 256- 261 ,(2001) , 10.1016/S0040-6090(00)01753-3
E. Arushanov, E. Bucher, Ch. Kloc, O. Kulikova, L. Kulyuk, A. Siminel, Photoconductivity in n-type beta -FeSi2 single crystals. Physical Review B. ,vol. 52, pp. 20- 23 ,(1995) , 10.1103/PHYSREVB.52.20
N. Cherief, C. D’Anterroches, R. C. Cinti, T. A. Nguyen Tan, J. Derrien, Semiconducting silicide‐silicon heterojunction elaboration by solid phase epitaxy Applied Physics Letters. ,vol. 55, pp. 1671- 1673 ,(1989) , 10.1063/1.102313
J Tani, H Kido, First-principle study of native point defects in β-FeSi2 Journal of Alloys and Compounds. ,vol. 352, pp. 153- 157 ,(2003) , 10.1016/S0925-8388(02)01127-1
Yoshihito Maeda, Kenji Umezawa, Kiyoshi Miyake, Kenya Ohashi, Infrared-Photovoltaic Responses of Ion-Beam Synthesized β-FeSi 2 / n -Si Heterojunctions MRS Proceedings. ,vol. 607, pp. 315- ,(1999) , 10.1557/PROC-607-315
G. Guizzetti, F. Marabelli, M. Patrini, P. Pellegrino, B. Pivac, L. Miglio, V. Meregalli, H. Lange, W. Henrion, V. Tomm, Measurement and simulation of anisotropy in the infrared and Raman spectra of beta-FeSi2 single crystals Physical Review B. ,vol. 55, pp. 14290- 14297 ,(1997) , 10.1103/PHYSREVB.55.14290
Yoshihito Maeda, Kenji Umezawa, Yoshikazu Hayashi, Kiyoshi Miyake, Raman spectroscopic study of ion-beam synthesized polycrystalline β-FeSi2 on Si(100) Thin Solid Films. ,vol. 381, pp. 219- 224 ,(2001) , 10.1016/S0040-6090(00)01747-8
K. Lefki, P. Muret, Photoelectric study of β‐FeSi2 on silicon: Optical threshold as a function of temperature Journal of Applied Physics. ,vol. 74, pp. 1138- 1142 ,(1993) , 10.1063/1.354939