Photovoltaic characteristics of Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) at various temperatures
作者： H.G. Çetinkaya , H. Tecimer , H. Uslu , Ş. Altındal
DOI: 10.1016/J.CAP.2013.03.010
关键词:
摘要: Abstract The charge conduction properties of the Au/PVA (Bi-doped)/n-Si Schottky barrier diodes (SBDs) were investigated using current–voltage–temperature (I–V–T) measurements in dark and under various illumination levels. For this purpose, main diode parameters such as reverse-saturation current (Io), zero-bias height (ΦBo), ideality factor (n), series resistance (Rs) shunt (Rsh) obtained function temperature level. Experimental results show that all these electrical are strong functions temperature. change becomes more important at low temperatures While n value decreases with increasing level, ΦBo increases. fill (FF = Vm·Im/Voc·Isc) values 0.34 80 K 0.40 320 K 50 W values near to a photodiode. Therefore, fabricated can be used photodiode optoelectronic applications. forward bias I–V characteristics have also been explained by space limited (SCLC) model.
harvard.edu
elsevier.com
sci-hub.se 参考文章(43)
G. Vijaya Kumar, R. Chandramani, Doping and irradiation dependence of electrical conductivity of Fe3+ and Ni2+ doped polyvinyl alcohol films Acta Physica Polonica A. ,vol. 117, pp. 917- 920 ,(2010) , 10.12693/APHYSPOLA.117.917
Fahrettin Yakuphanoglu, Evaluation of photoresponse in solution-processable ZnO thin film transistor for radiative sensor applications Sensors and Actuators A-physical. ,vol. 173, pp. 141- 144 ,(2012) , 10.1016/J.SNA.2011.11.019
Fahrettin Yakuphanoglu, Controlling of silicon–insulator–metal junction by organic semiconductor polymer thin film Synthetic Metals. ,vol. 160, pp. 1551- 1555 ,(2010) , 10.1016/J.SYNTHMET.2010.05.024
Özkan Vural, Yasemin Şafak, Abdülmecit Türüt, Şemsettin Altındal, Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics Journal of Alloys and Compounds. ,vol. 513, pp. 107- 111 ,(2012) , 10.1016/J.JALLCOM.2011.09.101
Fahrettin Yakuphanoglu, Mehmet Kandaz, B. Filiz Senkal, Inorganic–organic photodiodes based on polyaniline doped boric acid and polyaniline doped boric acid:nickel(II) phthalocyanine composite Sensors and Actuators A-physical. ,vol. 153, pp. 191- 196 ,(2009) , 10.1016/J.SNA.2009.05.008
Ş Karataş, Ş Altındal, A Türüt, A Özmen, Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts Applied Surface Science. ,vol. 217, pp. 250- 260 ,(2003) , 10.1016/S0169-4332(03)00564-6
S. Demirezen, Ş. Altındal, İ. Uslu, Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature Current Applied Physics. ,vol. 13, pp. 53- 59 ,(2013) , 10.1016/J.CAP.2012.06.009
Bayram Gunduz, Fahrettin Yakuphanoglu, Effects of UV and white light illuminations on photosensing properties of the 6,13-bis(triisopropylsilylethynyl)pentacene thin film transistor Sensors and Actuators A-physical. ,vol. 178, pp. 141- 153 ,(2012) , 10.1016/J.SNA.2012.02.032
A.N. Saxena, Forward current-voltage characteristics of Schottky barriers on n-type silicon Surface Science. ,vol. 13, pp. 151- 171 ,(1969) , 10.1016/0039-6028(69)90245-3
S. K. Cheung, N. W. Cheung, Extraction of Schottky diode parameters from forward current‐voltage characteristics Applied Physics Letters. ,vol. 49, pp. 85- 87 ,(1986) , 10.1063/1.97359